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| FJN13003 FJN13003 High Voltage Switch Mode Application * High Speed Switching * Suitable for Electronic Ballast up to 21W 1 TO-92 1. Emitter 2. Collector 3.Base NPN Silicon Transistor Planar Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Collector Power Dissipation(Ta=25C) Junction Temperature Storage Temperature Value 700 400 9 1.5 3 0.75 1.5 1.1 150 - 65 ~ 150 Units V V V A A A A W C C * Pulse Test: Pulse Width=5ms, Duty Cycle < 10% Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO IEBO hFE VCE (sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Test Condition IC=500A, IE=0 IC=5mA, IB=0 IE=500A, IC=0 VEB=9V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=1.0A IC=0.5A, IB=0.1A IC=1.0A, IB=0.25A IC=1.5A, IB=0.5A VBE (sat) fT tON tSTG tF Base-Emitter Saturation Voltage Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time IC=0.5A, IB=0.1A IC=1.0A, IB=0.25A VCE=10V, IC=0.1A VCC=125V, IC=1A, IB1=0.2A, IB2=-0.2A, RL = 125 4 1.1 4.0 0.7 9 5 0.5 1.0 3.0 1.0 1.2 V V V V V MHz s s s Min. 700 400 9 10 21 Typ. Max. Units V V V A (c)2001 Fairchild Semiconductor Corporation Rev. A, July 2001 FJN13003 Typical Characteristics (Continued) 2.0 100 o IC [A], COLLECTOR CURRENT Ta = 25 C 1.6 Ta = 125 C o VCE = 2V hFE, DC CURRENT GAIN IB = 500mA 1.2 10 Ta = - 40 C o 0.8 IB = 100mA IB = 50mA 1 0.4 IB = 0mA 0.0 0 1 2 3 4 5 0.1 1m 10m 100m 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 10 VCE(SAT) [V], SATURATION VOLTAGE Ta = 25 C Ta= - 40 C 1 o o VBE(SAT) [V], SATURATION VOLTAGE IC = 4 IB Ta = 125 C o IC = 4 IB 1 Ta = - 40 C o o Ta = 125 C Ta = 25 C o 0.1 0.01 0.01 0.1 1 10 0.1 0.01 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 10 1.4 PC [W], COLLECTOR POWER DISSIPATION 1.2 tSTG & tF [s], SWITCHING TIME tSTG 1 1.0 0.8 tF 0.1 0.6 0.4 IC= 5IB1= - 5IB2 VCC = 125V 0.01 0.1 1 0.2 0.0 0 25 50 o 75 100 125 150 175 IC [A], COLLECTOR CURRENT Ta [ C], AMBIENT TEMPERATURE Figure 5. Resistive Load Switching Time Figure 6. Power Derating (c)2001 Fairchild Semiconductor Corporation Rev. A, July 2001 FJN13003 Typical Characteristics 10 1.6 1.4 RB2 = 0, IB1 = 1A VCC = 10V, L = 50mH IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT 1 1.2 1.0 100m 0.8 0.6 10m 0.4 0.2 VBE(OFF)= - 5V 1m 1 10 100 1000 0.0 0 200 400 600 800 VCE [V], COLLECTOR-EMITTER VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 7. Forward Bias Safe Operating Area Figure 8. Reverse Bias Safe Operating Area (c)2001 Fairchild Semiconductor Corporation Rev. A, July 2001 FJN13003 Package Demensions TO-92 4.58 -0.15 +0.25 0.46 14.47 0.40 0.10 4.58 0.20 1.27TYP [1.27 0.20] 3.60 0.20 1.27TYP [1.27 0.20] 0.38 -0.05 +0.10 3.86MAX 1.02 0.10 0.38 -0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A, July 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2001 Fairchild Semiconductor Corporation Rev. H3 |
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